Semiconductor chip power supply system

ABSTRACT

The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/122,844 filed on Sep. 5, 2018, which is based on and claims priorityto Chinese Patent Application No. 201710801528.2, filed on Sep. 7, 2017,the entire contents of both of which are incorporated herein byreference.

TECHNICAL FIELD

This disclosure relates to the field of semiconductors, and moreparticularly, a semiconductor chip power supply system.

BACKGROUND

With the growing computing capability of artificial intelligence, itsapplication fields become more and more wide. In this process, animportant development direction of the artificial intelligence is thatcomputing units with different structures and resources are used inparallel for calculation, which requires using a large number of CPUs,GPUs, FPGAs and ASICs. Along with the development of the semiconductortechnology, such semiconductor chips will need a higher workingfrequency, and more current and power consumption due to the physicalcharacteristics thereof.

Therefore, in order to meet the requirements of the semiconductor chipfor computing performance and heat dissipation, higher technicalrequirements are proposed for a DC-DC (Direct current to direct current)power supply module. The DC-DC module needs to provide a processor witha larger current. The DC-DC module provides the power supply voltage tomultiple cores of the semiconductor chip separately so as to reduce thepower consumption in light load. The DC-DC module rapidly adjusts thepower supply voltage so as to reduce the power consumption of thecomputing core in the idle time.

FIG. 1 is a schematic diagram of a semiconductor chip power supplysystem according to the related art. As shown in FIG. 1, thesemiconductor chip power supply system 1 includes: a semiconductor chip10 (such as a CPU, GPU, FPGA or ASIC) using a relatively high precisionsemiconductor manufacturing process A1, such as 14 nm process; a powerconverter control chip 12 using a relatively low precision semiconductormanufacturing process A2, such as 180 nm process; and a power converterpower stage 11 including: switches T1 and T2 and their driver 100, aswell as other corresponding passive components, such as an inductor L1,a capacitor C1, and a transformer. The switching frequency of the powerconverter power stage 11 is generally around 500 KHz, but the presentdisclosure is not limited thereto. In the semiconductor chip powersupply system 1, the power converter power stage 11 supplies power tothe semiconductor chip 10 by the controlling of the power convertercontrol chip 12.

In order to meet the power supply demands of the chips in the future,the working frequency of the power converter power stage needs to begreatly improved to meet the higher power density and faster regulationcapability, for example, from the current 500 KHz to 2 MHz or even above10 MHz; also, the power converter control chip must have more rapidcontrol capability, so the process precision A2 also needs to beimproved. However, an increase in the process precision A2 often resultsin a high cost, especially in a case of increasing the process precisionA2 to the process precision A1. Besides, the size of an independentpower converter control chip is often small, and its market amount isdifficult to support the high cost of high-tech semiconductordevelopment. Therefore, at present, the process precision of 14 nm ofthe semiconductor chips is populated, but the process precision of thepower converter control chip generally has not reached 60 nm.

SUMMARY

In view of the above problems, the embodiments of the present disclosureprovide a semiconductor chip power supply system which can realize highfrequency regulation at low cost with a simple system structure, alsowith the benefits of reducing size and increasing reliability.

According to a first aspect of the embodiments of the presentdisclosure, there is provided a semiconductor chip power supply system,including: a semiconductor chip including: a semiconductor chipcomprising: a first data processing function area and a first powerconverter control area, the first data processing function area and thefirst power converter control area being formed on a first semiconductorsubstrate of the semiconductor chip; and a first power converter powerstage located outside the first semiconductor substrate and electricallyconnected to the first power converter control area and the first dataprocessing function area; wherein the first power converter control areacontrols the first power converter power stage to supply power to thefirst data processing function area, and the first power convertercontrol area receives a signal of an output voltage of the first powerconverter power stage and adjusts an output voltage of the first powerconverter power stage according to a working frequency of the first dataprocessing function area; wherein the first power converter power stagecomprises: at least a switch, a driver and at least a passive device.

The present disclosure has at least the following advantageous technicaleffects: because the power converter control area is developed with thesemiconductor chip, the process precision of the power converter controlarea is high with low cost. Moreover, the components of the system alsobecome less, making the system structure more concise, and reliabilityis therefore improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a semiconductor chip power supplysystem according to the related art;

FIG. 2 is a schematic diagram of a semiconductor chip power supplysystem according to a first embodiment of the present disclosure;

FIG. 3 is a schematic diagram of a physical structure of a semiconductorchip according to an embodiment of the present disclosure;

FIG. 4 is a start time sequence diagram of a semiconductor chip powersupply system according to an embodiment of the present disclosure;

FIG. 5 is a schematic diagram of a semiconductor chip power supplysystem according to the related art;

FIG. 6 is a schematic diagram of a modified embodiment according to asecond embodiment of the present disclosure;

FIG. 7 is a schematic diagram of a semiconductor chip power supplysystem according to a third embodiment of the present disclosure;

FIG. 8 is a schematic diagram of a semiconductor chip power supplysystem according to a fourth embodiment of the present disclosure;

FIG. 9 is a schematic diagram of a semiconductor chip power supplysystem according to a fifth embodiment of the present disclosure;

FIG. 10 is a schematic diagram of a semiconductor chip power supplysystem according to a sixth embodiment of the present disclosure;

FIG. 11 is a schematic diagram of a semiconductor chip power supplysystem according to a seventh embodiment of the present disclosure;

FIG. 12 is a schematic diagram of a semiconductor chip power supplysystem according to an eighth embodiment of the present disclosure;

FIG. 13 is a schematic diagram of a semiconductor chip power supplysystem according to a ninth embodiment of the present disclosure;

FIGS. 14-17 are schematic diagrams showing physical placing positions ofthe power converter power stage in the semiconductor chip power supplysystem according to an embodiment of the present disclosure;

FIG. 18 is a schematic diagram of integrating a MIM capacitor inside thesemiconductor chip according to an embodiment of the present disclosure;and

FIG. 19 is a schematic diagram of controlling an output voltage of thepower converter in advance according to an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The embodiments of the present disclosure will be described in detailbelow. It should be noted that the embodiments described herein are forillustrative purposes only and are not intended to limit the scope ofthe present disclosure. Hereinafter, the present disclosure will bedescribed in detail with reference to the accompanying drawings andembodiments. In addition, it should be noted that, in the case of noconflict, the embodiments in the present disclosure and the features inthe embodiments may be combined with each other.

First Embodiment

FIG. 2 is a schematic diagram of a semiconductor chip power supplysystem according to the first embodiment of the present disclosure.

As shown in FIG. 2, the semiconductor chip power supply system 2includes: a semiconductor chip 20 and a power converter power stage 21.The semiconductor chip 20 includes: a data processing function area 201and a power converter control area 202. The data processing functionarea 201 and the power converter control area 202 are formed on asemiconductor substrate 203 of the semiconductor chip 20 (as shown inFIG. 3). The power converter power stage 21 is located outside thesemiconductor substrate and electrically connected to the powerconverter control area 202 and the data processing function area 201. Inthe semiconductor chip power supply system 2, the power convertercontrol area 202 controls the power converter power stage 21 to supplypower to the data processing function area 201.

In the embodiments of the present disclosure, the data processingfunction area and the power converter control area are integrated in onesemiconductor chip, that is, the power converter control area and thedata processing function area, as well as other functional partitions ofthe semiconductor chip physically belong to the same semiconductorsubstrate. In addition, the data processing function area and the powerconverter control area communicate within the chip, such as within anRDL (Redistribution Layer).

By forming both the data processing function area and the powerconverter control area on the semiconductor substrate of thesemiconductor chip, the process precision A1 of the data processingfunction area may be the same as the process precision A2 of the powerconverter control area, i.e., the data processing function area and thepower converter control area may use the same manufacturing process. Thepower converter control area is developed along with the semiconductorchip, thereby the process precision of the power converter control areais high, and a high frequency can be achieved at low cost. Moreover, thenumber of the components of the system is reduced from three maincomponents in FIG. 1 to two main components in FIG. 2, making the systemstructure more concise, thus reducing system size and improvingreliability.

In the present embodiment, the power converter power stage 21 at leastincludes a switch, a driver 210 and a passive device. The powerconverter power stage 21 may employ a multi-phase paralleled buckcircuit or a switched capacitor circuit, but the present disclosure isnot limited thereto.

As shown in FIG. 2, for example, the switch may include switches T21 andT22, and the passive device may include an inductor L21 and a capacitorC21. Drive signal receiving pins P11 and 12 of the driver 210 areelectrically connected to drive signal sending pins P4 and P3 of thepower converter control area 202, respectively. An output terminal ofthe driver 210 is electrically connected to control electrodes of theswitches 121 and T22. The first electrode of the switch T21 is connectedto a second electrode of the switch 122. The second electrode of theswitch T21 receives an input voltage Vin. The input voltage Vin may beobtained from an input terminal of the power converter power stage 21.The first electrode of the switch 122 is grounded. A connection pointbetween the switch 121 and the switch 122 is connected to one end of theinductor L21. The other end of the inductor L21 is connected to a poweroutput pin P13 of the power converter power stage 21 to output a voltageVo, and is connected to one end of the capacitor C21. The other end ofthe capacitor C21 is connected to a ground pin P14 of the powerconverter power stage 21 and then is grounded. However, the presentdisclosure is not limited thereto, and the power converter power stagemay adopt other circuit topologies.

In one embodiment, the power converter control area 202 sends a drivesignal (for example, a PWM signal and a GND signal) to the drive signalreceiving pins P11 and P12 of the power converter power stage 21 via thedrive signal sending pins P3 and P4. The driver 210 receives the drivesignal from the drive signal receiving pins P11 and P12, and amplifiesthe drive signal and drives the switches T1 and 12. Then, the switchesT1 and 12 cooperate with the passive device (e.g., the inductor L21 andthe capacitor C21) to convert the input voltage Vin to the outputvoltage Vo and provides the output voltage Vo to the data processingfunction area 201 via the power output pin P13.

In addition, the power converter power stage 21 may provide its workingstatus signal to the power converter control area 202 via a workingstatus signal receiving pin (not shown). The working status signal is,for example, a PG (Power Good) signal, a fault signal, an Over CurrentProtect (OCP) signal, an Over Temperature Protect (OTP) signal or thelike, or is a sampling of the input voltage Vin, an output voltage Vo orthe like. These working status signals are provided to the powerconverter control area 202 so that the power converter control area 202may control the working status of the power converter power stage

In an embodiment, the drive signal sending pins P3 and P4 of thesemiconductor chip 20 may be multiplexed to realize a status signalreceiving function, that is, for the same pin, the above-mentioneddifferent functions may be implemented in a time-dividing manner (atime-share manner), so that the number of the pins used by thesemiconductor chip 20 can be saved. The drive signal sending pin and theworking status signal receiving pin are multiplexed.

The semiconductor chip 20 may further have a first power supply pin PSand a second power supply pin P2. The first power supply pin P5 iselectrically connected to the data processing function area 201 andreceives a first voltage (for example, the output voltage Vo) providedby the power converter power stage 21 to supply power to the dataprocessing function area 201. The second power supply pin P2 iselectrically connected to the power converter control area 202 andreceives a second voltage (e.g., a voltage Vcon from an external powersource) to supply power to the power converter control area 202.However, the present disclosure is not limited thereto.

In this embodiment, the power output pin P13 of the power converterpower stage 21 is connected to the first power supply pin P5 forproviding the power Vo to the data processing function area 201. Inaddition, the semiconductor chip 20 may further have a ground pin P6,which is connected to a ground pin P14 of the power converter powerstage 21 and then is grounded.

The semiconductor chip 20 may also have an input signal pin PI forreceiving a voltage signal of the input voltage Vin of the powerconverter power stage 21. The semiconductor chip 20 may also receivesignal of the output voltage Vo of the power converter power stage 21.This facilitates the power converter control area 202 to betterunderstand the real-time status of the power converter power stage 21,and then realize an accurate and fast output control. The input signalpin P1 may also receive other types of input signals, but the presentdisclosure is not limited thereto.

The physical structure of the semiconductor chip 20 will be describedbelow with reference to FIG. 3. As shown in FIG. 3, the semiconductorchip 20 includes a semiconductor substrate 203 (e.g., siliconsubstrate). A transistor layer 204 is formed on the semiconductorsubstrate 203 by a process such as doping and etching on thesemiconductor substrate 203. Transistors in the transistor layer 204 areinterconnected through a connection layer 205 to realize the function ofthe semiconductor chip 20. But the present disclosure is not limitedthereto.

FIG. 4 is a startup time sequence diagram of a semiconductor chip powersupply system according to an embodiment of the present disclosure. Withreference to FIGS. 2 and 4, when the semiconductor chip 20 is activated,firstly in step S100, a voltage Vcon is supplied to the power convertercontrol area 202 of the semiconductor chip 20 via the second powersupply pin P2. Then, in step S200, the power converter control area 202generates various types of control parameters according to the initialsetting or the setting during the last operation, for controlling thestartup of the power converter power stage 21. Before starting the powerconverter power stage 21, in step S300, the power converter control area202 determines whether the input voltage Vin inputted to the powerconverter power stage 21 meets input requirement, for example, whetherthe input voltage Vin is in a range of 6-10V. If the input voltage Vindoes not meet the requirement, then a detection of the input voltage Vinis maintained, waiting for that the input voltage Vin enters into therequired range. When the input voltage Vin meets the requirement, theprocess proceeds to step S400, and the power converter control area 202controls the power converter power stage 21 to supply power to otherparts of the semiconductor chip 20 besides the power converter controlarea 202.

In an embodiment, the power supply time sequence described above mayfurther include steps S500 and S600, as shown by dotted lines in FIG. 4.In step S500, it is determined Whether the output voltage Vo meets arequirement, for example, whether an amplitude of Vo is within a normalworking voltage range of the power converter control area. If the outputvoltage Vo does not meet the requirement, then the detection of theoutput voltage Vo is continued to wait for the output voltage Vo fallinginto the required range. When the output voltage Vo meets therequirement, the process advances to step S600 to supply power to thepower converter control area 202 with the voltage Vo instead of Vcon.

According to the above power supply time sequence, the power convertercontrol area of the semiconductor chip is firstly powered by the Vconand is activated prior to other areas of the semiconductor chip. Whenthe power converter control area is activated and Vin meets therequirement, the power converter control area controls the powerconverter power stage to output the voltage Vo and thus the powerconverter power stage powers other areas of the semiconductor chipexcept the power converter control area.

In this embodiment, the first power supply pin P5 is also electricallyconnected to the power converter control area 202. After the voltage Vois greater than a threshold value, the voltage Vo of the first powersupply pin P5 supplies power to the power converter control area 202instead of the voltage Vcon of the second power supply pin P2. That is,if the Vo meets the requirement, the Vo may be used to replace Vcon forpowering the power converter control area of the semiconductor chip.

According to an embodiment of the present disclosure, after receivingthe Vcon, the power converter control area of the semiconductor chipstarts to operate, samples the output voltage Vo or output current,compares it with a target voltage or current, performs somecalculations, and then sends a next cycle drive signal, therebycontrolling the power converter power stage, so as to make the outputvoltage reach the target state, such as in start, steady-state, dynamic,overload and other states.

In an embodiment, the circuit of the power converter power stage 21 mayselect a switched inductor circuit or a switched capacitor circuitaccording to the requirement for capability of adjusting the outputvoltage Vo by the semiconductor chip 20. For example, when a precisecontrol of Vo is required for the semiconductor chip 20, the switchedinductor circuit may be used, e.g., a buck circuit, whereas the switchedcapacitor circuit may be used instead.

In an embodiment, the above solution may be applied to a semiconductorchip with a process precision of 28 nm or higher, such as a processprecision of 12 nm (the smaller the process precision value is, thehigher the accuracy is), and the working frequency of the powerconverter power stage may be higher than or equal to 1 MHz, or evenhigher than 5MHz. In addition, because the advantages of the presentdisclosure are more obvious at a high frequency, a maximum operationfrequency of the semiconductor chip in an embodiment may be above 500MHz or even above 1 GHz.

Second Embodiment

FIG. 5 is a schematic diagram of a semiconductor chip power supplysystem according to the related art. The basis of the semiconductor chipis a variety of function circuits composed of transistors, and workingfrequency and working voltage of the semiconductor chip have a certainrelationship. For example, a semiconductor chip needs a working voltageof 1.0V when operating at a frequency of 3 GHz, and needs a workingvoltage of 0.8V when operating at a frequency of 300 MHz. As shown inthe circuits of FIG. 1 and FIG. 2, no matter the semiconductor chipworks under any condition, the voltage of the output voltage Vo is notadjusted accordingly. For example, when the semiconductor chip operatesat a frequency of 3 GHz or 300 MHz, the output voltage is always 1.0V,and thus much power is wasted when operating at 300 MHz. Therefore, insome embodiments of the present disclosure, by communicating thesemiconductor chip with the power controller, the output voltage of thepowerconverter can be provided as needed according to the workingcondition of the semiconductor chip, thereby saving energy as much aspossible.

As shown in FIG. 5, the semiconductor chip power supply system 3includes: a semiconductor chip 30, a powerconverter control chip 31, anda powerconverter power stage 32. The structure of the power converterpowerstage 32 is the same as that of the power converter power stage 11in FIG. 1, and thus will not be elaborated here.

The semiconductor chip 30 includes: a semiconductor chip smart functionarea a semiconductor chip power management area 302, a power managementdata register 303, and a semiconductor chip communication interface 304.The power converter control chip 31 includes: a control chip controlfunction area 310, a power management data register 311, and a controlchip communication interface 312. The semiconductor chip communicationinterface 304 may communicate with the control chip communicationinterface 312 through a communication transmission line.

The semiconductor chip power management area 302 places a requirementfor the output voltage of the power converter control chip 31 (i.e., apower management parameter(s) or a control parameter(s)) into the powermanagement data register 303 according to an operation status of thesemiconductor chip smart function area 301. The semiconductor chipcommunication interface 304 reads the power management parameter fromthe power management data register 303, modulates the power managementparameter into a communication protocol (such as a PMBUS protocol), andthen transmits the communication protocol to the control chipcommunication interface 312 through the PMBUS bus. Then, the controlchip communication interface 312 demodulates the communication protocolto obtain the power management parameter and stores it into its powermanagement data register 311. After that, the control chip controlfunction area 310 adjusts the drive signal according to the powermanagement parameter and sends it to the power converter power stage 32,so that the semiconductor chip 30 may obtain the desired power supplyVo.

However, the structure shown in FIG. 5 has several disadvantages.

First of all, the transfer of the control parameter(s) passes throughmany sectors, so the speed is limited. It is difficult to meet theincreasingly high-speed requirement of adjusting the voltage Vo of thesemiconductor chip, resulting in the waste of energy.

Second, the communication transmission line is very long, andinterferences exist inevitably. The communication is easy to fail,causing maladjustment or system crashes. According to statistics, alarge part of the failures in such computing systems are caused by thefailure of communication transmission, resulting in great losses.

In view of this, the embodiment shown in FIG. 6 is given in conjunctionwith the spirit of FIG. 2 of the present disclosure. Compared with FIG.5, in FIG. 6, the complex communication function part is reduced, whichincreases the speed, reduces costs, reduces the size, and improves thereliability. The control chip is formed on the semiconductor chip toenable the control chip to be produced by using a high-precisionprocess.

Similar to the structure shown in FIG. 2, the semiconductor chip powersupply system 4 as shown in FIG. 6 also includes: a semiconductor chip40 and a power converter power stage 41. The semiconductor chip 40includes: a data processing function area 401 and a power convertercontrol area 402. The data processing function area 401 and the powerconverter control area 402 are formed on a semiconductor substrate ofthe semiconductor chip 40. The power converter power stage 41 is locatedoutside the semiconductor substrate and electrically connected to thepower converter control area 402 and the data processing function area401 to save costs. In the semiconductor chip power supply system 4, thepower converter control area 402 controls the power converter powerstage 41 to supply power to the data processing function area 401.Similar components and their connection structures and functions, suchas pin arrangements and connections, power supply source conversions ofthe power converter control area of the chip, may be applied to thisembodiment, which will not be elaborated here.

The semiconductor chip power supply system 4 shown in FIG. 6 isdifferent from the semiconductor chip power supply system 2 shown inFIG. 2 in that, as shown in FIG. 6, in the semiconductor chip powersupply system 4, the semiconductor chip 40 further includes: a powermanagement data register 403 and a semiconductor chip power managementarea 404. The power management data register 403 is electricallyconnected to the semiconductor chip power management area 404, the powermanagement data register 403 is electrically connected to the powerconverter control area 402 inside the semiconductor chip, thesemiconductor chip power management area 404 provides the powerconverter control area 402 with the required control parameter(s) andthe control parameter(s) is stored in the power management data register403, and the power converter control area 402 regulates the output powersupply of the power converter power stage 41 by reading the controlparameter(s) in the power management data register 403.

As described above, the semiconductor chip has a semiconductor chippower management function so that it is possible to provide parametersfor adjusting the power supply manner of the power converter powerstage. The semiconductor chip power converter control area 402 extractsthe control parameter(s) within the semiconductor chip 40 and adjuststhe drive signal by calculation according to each parameter of the powerconverter power stage, so that the output Vo of the power converterpower stage can meet the requirement of the semiconductor chip.

In an embodiment, the above control parameter(s) may be directlyaccessed by the semiconductor chip power management function 404 and thesemiconductor chip power converter control area 402 through the powermanagement data register 403.

Third Embodiment

For large semiconductor chips, in order to achieve more powerful dataprocessing functions, a chip is often divided into multiple functionareas, such as multiple cores. These function areas often workindependently. In other words, working conditions of individual functionareas may be not the same at the same time. If each of the functionareas may be individually powered and adjusted according to individualrequirements, the low energy consumption can be achieved to the utmost.

Based on this, the third embodiment of the present disclosure providesan embodiment of a semiconductor chip power supply system as shown inFIG. 7.

As shown in FIG. 7, the semiconductor chip 50 of the semiconductor chippower supply system 5 is divided into N partitions, i.e., a firstsemiconductor chip partition 501, . . . , and N^(th) semiconductor chippartition 50N, where N is an integer greater than or equal to 2. Eachsemiconductor chip partition may be equivalent to the entiresemiconductor chip 20 shown in FIG. 2, i.e., each semiconductor chippartition includes a respective data processing function area and apower converter control area. Alternatively, each semiconductor chippartition may be equivalent to the entire semiconductor chip 40 shown inFIG. 6, i.e., each semiconductor chip partition includes a respectivedata processing function area, a power converter control area, a powermanagement data register, and a semiconductor chip power managementarea. However, the present disclosure is not limited thereto.Correspondingly, the semiconductor chip power supply system furtherincludes: N power converter power stages 511-51N. The output voltagesand the input voltages of the respective power converter power stages511-51N may be designed to be the same, but the present disclosure isnot limited thereto.

The first semiconductor chip partition 501 includes: a data processingfunction area 5010 and a power converter control area 5011. Optionally,the first semiconductor chip partition 501 may further include: a powermanagement data register 5012 and a semiconductor chip power managementarea 5013. The data processing function area 5010 of the firstsemiconductor chip partition 501 is powered via a power converter powerstage 511. The N^(th) semiconductor chip partition SON includes: a dataprocessing function area 50N0 and a power converter control area 50N1.Alternatively, the N^(th) semiconductor chip partition 50N may furtherinclude: a power management data register 50N2 and a semiconductor chippower management area 50N3. The data processing function area 50N0 ofthe N^(th) semiconductor chip partition 50N is powered via the powerconverter power stage 51N. The power management data register 50N2 iselectrically connected to the semiconductor chip power management area50N3. The power management data register 50N2 is electrically connectedto the power converter control area 50N1 of the N^(th) power converterpower stage 51N. The semiconductor chip power management area 50N3provides the power converter control area 50N1 with the required controlparameter(s) and the control parameter(s) is stored in the powermanagement data register 50N2. The power converter control area 50N1adjusts the output power supply of the N^(th) power converter powerstage 51N by reading the control parameter(s) in the power managementdata register 50N2.

N data processing function areas 5010-50N0 may be independently poweredfor obtaining a relatively good performance-to-power ratio. Accordingly,the semiconductor chip 50 integrates at least N power converter controlareas for adjusting the input voltage Vo of the above N data processingfunction areas (i.e., the output voltage of the corresponding powerconverter power stage).

Other components, connection structures and the functions of theforegoing embodiments may be applicable to the present embodiment. Forexample, the semiconductor chip 50 may further have a third power supplypin and a fourth power supply pin. The third power supply pin iselectrically connected to the N^(th) data processing function area 50N0and receives a third voltage provided by the N^(th) power converterpower stage 51N to supply power to the N^(th) data processing functionarea 50N0. The fourth power supply pin is electrically connected to theN^(th) power converter control area 50N1 and receives a fourth voltage(e.g., from an external power source) to supply power to the N^(th)power converter control area 50N1. The present disclosure is not limitedthereto.

Although the corresponding connection relationships of individual pinsof the two semiconductor chip partitions 501 and 50N are set to be thesame in FIG. 7, the voltages received by individual pins of the twosemiconductor chip partitions 501 and 50N may be different, for example,the first voltage received by the semiconductor chip partition 501 maybe different from the third voltage received by the semiconductor chippartition 50N, and the second voltage received by the semiconductor chippartition 501 may be different from the fourth voltage received by thesemiconductor chip partition 50N. Other elements and their connectionstructures and functions in the foregoing embodiments, such as a powersupply source conversion in the power converter control area of thechip, may be applied to this embodiment, and details are not describedherein again.

In an embodiment, the power converter control area, the power managementdata register, and the semiconductor chip power management areacorresponding to the X^(th) semiconductor chip partition (1<=X<=N) arewithin a physical area of the semiconductor chip partition, and isformed on the same semiconductor substrate of the semiconductor chip, soas to achieve short-range communication, thereby obtaining the bestperformance.

In an embodiment, N output voltages Vo1-VoN may be independentlyadjusted in real time according to the working states of thecorresponding data processing function areas.

Fourth Embodiment

On the basis of FIG. 7, if the processing speeds of the semiconductorchip power management area and the power management data register arefast enough, one group of semiconductor chip power management area andpower management data register may correspond to a plurality of powerconverter control areas, to achieve time division multiplexing, therebysaving the area of the semiconductor chip occupied by the managementarea and register. This type of semiconductor chip power supply systemwill be described below with reference to FIG. 8.

As shown in FIG. 8, the semiconductor chip power supply system 6includes: a semiconductor chip 60 and power converter power stages 61and 62. The semiconductor chip 60 includes: a first data processingfunction area 6010, a second data processing function area 6011, a firstpower converter control area 6021 and a second power converter controlarea 6022. The semiconductor chip 60 further includes: a powermanagement data register 603 and a semiconductor chip power managementarea 604. The power management data register 603 is electricallyconnected to the semiconductor chip power management area 604. The powermanagement data register 603 is electrically connected to the firstpower converter control area 6021 and the second power converter controlarea 6022. The semiconductor chip power management area 604 providescontrol parameter(s) required by the first power converter control area6021 and the second power converter control area 6022 and stores thecontrol parameter(s) in the power management data register 603, Thefirst power converter control area 6021 and the second power convertercontrol area 6022 read the control parameter(s) in the power managementdata register 603 to respectively adjust the output power supplies ofthe first power converter power stage 61 and the second power converterpower stage 62.

In the semiconductor chip power supply system 6, the semiconductor chippower management area 604 and the power management data register 603 ofthe semiconductor chip 60 are connected to the first data processingfunction area 6010, the second data processing function area 6011, thefirst power converter control area 6021 and the second power convertercontrol area 6022.

Although only two data processing function areas, two power convertercontrol areas, and two power converter power stages 61 and 62 are shownin FIG. 8, the numbers of such function areas, control areas and powerstages may be set according to needs, for example, the number may be N,and N is an integer greater than 1. Thus, N power converter controlareas correspond to one group of semiconductor chip power managementarea(s) and power management data register(s), where N>=2. The presentembodiment may also be combined with the above embodiments. For example,a part of the power converter control areas in the chip correspond toone group of semiconductor chip power management area(s) and powermanagement data register(s), and another part of the power convertercontrol areas correspond to the same number of semiconductor chip powermanagement areas and power management data registers respectively.Similar elements and their connection structures and functions, such aspin arrangement and connection, power supply source conversion of powerconverter control area of the chip, may be applicable to thisembodiment, which will not be elaborated here.

Fifth Embodiment

To achieve more powerful computing power, in some semiconductor chips, aplurality of data processing function areas are designed into one groupfor sharing one task, such as GPU. Therefore, during operation, thecomputing task is equally distributed to the data processing functionareas in the same group, and therefore, the working voltages required bythe plurality of data processing function areas in the group are thesame. Based on FIG. 6, the present embodiment provides an example ofpowering multiple data processing function areas through one powerconverter power stage.

As shown in FIG. 9, the semiconductor chip power supply system 7includes: a semiconductor chip 70 and a power converter power stage 71.The semiconductor chip 70 includes: a first data processing functionarea 7010 to an N^(th) data processing function area 701N, and a powerconverter control area 702. Optionally, the semiconductor chip 70 mayfurther include: a power management data register 703 and asemiconductor chip power management area 704. The power management dataregister 703 is electrically connected to the semiconductor chip powermanagement area 704. The structure of the semiconductor chip 70 in FIG.9 is similar to that in FIG. 6, and details are not described hereinagain.

In the semiconductor chip power supply system 7, it is possible toinclude only one power converter power stage 71 and N semiconductor chipfunction areas. The N semiconductor chip function areas, that is, dataprocessing function areas, share one power converter power stage. The Ndata processing function areas may be electrically connected with theoutput of the power converter power stage through pins respectively.Alternatively, as shown in FIG. 9, the N data processing function areasmay be electrically connected with a pin (for example, a first powersupply pin) of the semiconductor chip, and then is electricallyconnected to the power converter power stage through the pin. Thisembodiment may also be combined with the foregoing embodiments. Forexample, a part of the data processing function areas in the chipcorrespond to one power converter power stage, and the other part of thedata processing function areas correspond to the same number of powerconverter power stages respectively. Similar elements and theirconnection structures and functions, such as pin arrangement andconnection, power supply source conversion power converter control areaof chip, setting of the semiconductor chip power management areas andpower management data registers are all applicable to this embodiment,which will not be elaborated here.

Sixth Embodiment

Because of a high level of integration, pin resource of thesemiconductor chip is tight. Therefore, the functions of the pins may beintegrated as much as possible. As shown in FIG. 10, since the voltageVcon to be received by the plurality of power converter control areasmay be the same, the power supply pins may be integrated and may beconnected as needed to the plurality of power converter control areaswithin the semiconductor chip. Based on the semiconductor chip powersupply system 5 shown in FIG. 7, the semiconductor chip power supplysystem 8 shown in FIG. 10 is improved in that: at least two powerconverter control areas share the same Vcon pin, Similarly, the Vin pinsmay also be integrated.

As shown in FIG. 10, the semiconductor chip 80 of the semiconductor chippower supply system 8 is divided into N partitions, i.e., a firstsemiconductor chip partition 801 to an N^(th) semiconductor chippartition 80N, where N is an integer greater than or equal to 2.Correspondingly, the semiconductor chip power supply system 8 furtherincludes: N power converter power stages 81-8N.

The first semiconductor chip partition 801 includes: a data processingfunction area 8010 and a power converter control area 8011.Alternatively, the first semiconductor chip partition 801 may furtherinclude: a power management data register 8012 and a semiconductor chippower management area 8013. The data processing function area 8010 ofthe first semiconductor chip partition 801 is powered via the powerconverter power stage 81. The N^(th) semiconductor chip partition 80Nincludes: a data processing function area 80N0 and a power convertercontrol area 80N1. Optionally, the N^(th) semiconductor chip partition80N may further include: a power management data register 80N2 and asemiconductor chip power management area 80N3. The data processingfunction area 80N0 of the N^(th) semiconductor chip partition 80N ispowered via the power converter power stage 8N.

At least two of the power converter control areas 8011 to 80N1 share thesame Vcon power supply pin.

Seventh Embodiment

Although in the semiconductor chip, multiple data processing functionareas need independent power supply, it is not always necessary for eachfunction area to integrate the power converter control area into thesemiconductor chip.

As shown in FIG. 11, the semiconductor chip power supply system 9includes: a semiconductor chip 90 and power converter power stages 91and 92. The semiconductor chip 90 includes two types of semiconductorchip partitions, one of which is shown in FIGS. 2 to 4 and FIGS. 6 to10, in which the power converter control area is integrated on thesemiconductor chip to belong to the same semiconductor substrate of thesemiconductor chip as the data processing function area. The processprecision of the semiconductor substrate is high, for example, higherthan or equal to 28 nm, such as 14 nm (the smaller the value is, thehigher the accuracy is).

Another type is shown in FIG. 1 and FIG. 5. The power convertercontroller is not located on the semiconductor chip, i.e., the powerconverter controller and the semiconductor chip are independent. Thedata processing function area is formed on the semiconductor substrateof the semiconductor chip, but the corresponding power converter powerstage and the power converter controller (or called as the power supplycontrol chip) are located outside the semiconductor chip, and the powerconverter controller is formed on another semiconductor substrate with alower precision, for example, lower than 28 nm, such as 180 nm. Thepower converter power stage is electrically connected to the powerconverter controller and the data processing function area, and thepower converter controller controls the power converter power stage tosupply power to the data processing function area.

In FIG. 11, M semiconductor chip partitions are illustrated, includingthe first to the N^(th) first-type semiconductor chip partitions and the(N+1)^(th) to the M^(th) second-type semiconductor chip partitions,where N is an integer greater than or equal to 1, and M>N, that is, thenumber of each type of the semiconductor chip partitions may be one ormore.

As a result, the numbers of the two types of semiconductor chippartitions may be adjusted according to the actual needs so that thepower supply can be provided more accurately and efficiently.

Eighth Embodiment

As shown in the above FIG. 7 and FIG. 11, the inputs and outputs ofindividual power converter power stages may also be different, so that abetter power stage performance and system layout can be obtainedflexibly with respect to the system requirements. Thus, based on FIG. 7or FIG. 11, in the eighth embodiment, as shown in FIG. 12, there are atleast two different Vin voltages in the power converter power stages101-10N.

Ninth Embodiment

Since some embodiments of the present disclosure are more suitable forapplications of high-frequency power converters, in order to achieve thehighest possible frequency, an input voltage of the high-frequencyconverter should be as low as possible. Therefore, in the face of avariety of input occasions, for example, as low as about 3Vrepresentative of a single-cell lithium, and up to 400V or even 1200Vrepresentative of high-voltage DC bus, a DC-DC converter (for example, aDC-DC buck converter) is used to convert the input voltage to a suitablevoltage Vin. For instance, in case of lithium batteries, the voltage isconverted into a voltage about 1˜1.8V, and in other occasions, thevoltage is converted into a voltage less than 8V or even 5V, and mayalso be converted to a voltage less than 1.8V according to a frequencyrequirement. When the voltage is between 4˜8V, the operating frequencyof the power converter is higher than 2 MHZ; when the voltage is between3˜6V, the operating frequency of the power converter is higher than 5MHZ; and when the voltage is between 1˜3V, the operating frequency ofthe power converter is higher than 10 MHZ, but the present disclosure isnot limited thereto.

As shown in FIG. 13, the semiconductor chip power supply system 11includes: a semiconductor chip 110 and a power converter power stage111. The structure of the semiconductor chip power supply system 11 maybe the same as or similar to that of the above embodiment, and thus willnot be repeated here. The semiconductor chip power supply system 11further includes: a DC-DC converter 112 for converting the input voltageand outputting an appropriate output voltage Vin to the power converterpower stage 111. The DC-DC converter is electrically connected to aninput terminal of the power converter power stage.

The DC-DC buck converter in the ninth embodiment may be applied to theabove first to eighth embodiments.

Tenth Embodiment

The physical placing position of the power converter power stage in asemiconductor chip power supply system will be described below withreference to FIGS. 14-17.

As shown in FIG. 14 and FIG. 15, in order to exert the characteristic ofhigh frequency and fast response of the present disclosure, the powerconverter power stage may be placed as close as possible to thesemiconductor chip.

The semiconductor chip power supply system 12 includes a semiconductorchip 120 including chip data processing function areas 1-N and a chippower converter control area. The semiconductor chip 120 is placed on achip carrier board 1200. The semiconductor chip power supply system 12also includes power converter power stages 121-12N. The power converterpower stages 121-12N are placed against the chip carrier board 1200 ofthe semiconductor chip.

The power converter power stages 121-12N may be placed directly below amain power/electricity consumption function area according to adistribution of the main electrical function areas of the semiconductorchip 120, for example, the power converter power stages 121-12N areplaced directly below the data processing function area (as shown inFIG. 14). Alternatively, the power converter power stages 121-12N may beplaced in the vicinity of the main electrical function area in the sameplane as the semiconductor chip (as shown in FIG. 15), therebyshortening a power supply distance.

The embodiment of FIG. 14 may be expanded into embodiments shown inFIGS. 16 and 17 according to a mounting method of the semiconductor chipand a size of a motherboard on which the semiconductor chip is carried.In FIG. 16, the power converter power stages 131-13N may be mounted inslots of the semiconductor chip 130, i.e., the power converter powerstage may be placed between the chip carrier board 1300 of thesemiconductor chip 130 and the motherboard 1310. In this way, a spacebetween the semiconductor chip 130 and the motherboard 1310 is utilized,thereby improving the utilization ratio of the motherboard 1310 andreducing the area occupied by the power supply on the motherboard 1310.The pins may be used for the electrical connection between the chipcarrier board 1300 and the motherboard 1310. In addition, because theefficiency of the power converter power stage is related to its size,increasing the size may increase its efficiency. Therefore, if the powerconverter power stage may be placed through the motherboard, the coolingcondition can be improved, the large size of the power converter powerstage can be allowed, and its conversion efficiency can be improved. Asshown in FIG. 17, in the semiconductor chip power supply system 13, thesemiconductor chip 130 is carried on the semiconductor chip carrierboard 1300, and the semiconductor chip carrier board 1300 is plugged onthe motherboard 1310. The power converter power stages 131-13N may bemounted through the motherboard 1310 under the chip carrier hoard 1300of the semiconductor chip 130.

Eleventh Embodiment

For a high-power semiconductor chip, an instantaneous change of currentconsumption is very large, so more high-frequency capacitors, such asMIM (metal-insulator-metal) capacitors, are needed to filter outhigh-frequency current disturbances. In the current practice, the MIMcapacitor is integrated inside the semiconductor chip using ahigh-precision process. According to the present disclosure, the MIMcapacitor may be integrated in the power converter power stage.

As shown in FIG. 18, in the semiconductor chip power supply system 14,the semiconductor chip 140 is placed on the chip carrier board 1400, andthe power converter power stages 141 to 14N are placed in close contactwith the chip carrier board 1400 of the semiconductor chip. The MIMcapacitor integrated inside the power converter power stages 141 to 14N,By integrating the high-frequency capacitor in the power converter powerstages, for example, a resonant frequency of the capacitor is above 2MHz, the cost of the semiconductor chip can be reduced.

Twelfth Embodiment

Under the challenge of increasing instantaneous current consumption ofthe semiconductor chip, the low dynamic voltage variation can beachieved by using the control method shown in FIG. 19 by takingadvantage of the high-speed communication and high-frequency processingcapability of the embodiments of the present disclosure. The principleof operation is that when the semiconductor chip receives a dataprocessing task, the semiconductor chip power management area predicts avoltage change according to the data processing task and adjusts anoutput voltage Vo of the power converter power stage in advance throughhigh-frequency communication, so as to reduce an amplitude of the outputvoltage drop and overshoot caused by the current dynamics.

In the structures of the semiconductor chip power supply systemsdescribed above, the control method shown in FIG. 19 may be utilized.After receiving information that the data processing function area isgoing to change the consumed current, the semiconductor chip powermanagement area provides the control parameter(s) to the power convertercontrol area so as to, before the current consumed by the dataprocessing function area actually changes, make the power convertercontrol area control an output voltage of the first power converterpower stage to be adjusted, and make a direction of adjustment of theoutput voltage of the power converter power stage be opposite to thedirection of change of the output voltage of the power converter powerstage due to the change of the current consumed by the data processingfunction area.

Taking FIG. 19 as an example, after a data processing task is receivedby the semiconductor chip, at a moment t1 before a moment t2 at whichthe consumed current increases, by communicating with the control area,the output voltage Vo is increased before the moment t2. At the end ofprocessing task, at a moment t3 before a moment t4 at which the consumedcurrent decreases, by communicating with the control area, the outputvoltage Vo is reduced before the moment t4. Compared with the relatedart, the voltage drop and overshoot caused by the drastic changes of thecurrent consumed by the semiconductor chip, that is, the load current,will be small.

That is, before the current consumed by the semiconductor chip changes,the output voltage of the power converter is controlled to be adjustedsuch that the voltage peak/valley due to the current change is closer toa the steady-state voltage.

Although the present disclosure has been described above in detail byway of exemplary embodiments, the scope of the present disclosure is notlimited to the above embodiments, and various improvements andmodifications may be made to the present disclosure by those skilled inthe art without departing from the scope and spirit of the presentdisclosure.

What is claimed is:
 1. A semiconductor chip power supply system,comprising: a semiconductor chip comprising: a first data processingfunction area and a first power converter control area, the first dataprocessing function area and the first power converter control areabeing formed on a first semiconductor substrate of the semiconductorchip; and a first power converter power stage located outside the firstsemiconductor substrate and electrically connected to the first powerconverter control area and the first data processing function area;wherein the first power converter control area controls the first powerconverter power stage to supply power to the first data processingfunction area, and the first power converter control area receives asignal of an output voltage of the first power converter power stage andadjusts an output voltage of the first power converter power stageaccording to a working frequency of the first data processing functionarea; wherein the first power converter power stage comprises: at leasta switch, a driver and at least a passive device.
 2. The semiconductorchip power supply system according to claim 1, wherein the semiconductorchip comprises: a drive signal sending pin, the first power convertercontrol area sends a drive signal to the driver via the drive signalsending pin, the driver drives the switch according to the drive signal,and the switch cooperates with the passive device to supply power to thefirst data processing function area.
 3. The semiconductor chip powersupply system according to claim 1, wherein the first power converterpower stage comprises: a multi-phase paralleled buck circuit or aswitched capacitor circuit.
 4. The semiconductor chip power supplysystem according to claim 2, wherein the first power converter powerstage comprises: a working status signal sending pin for sending aworking status signal of the first power converter power stage to thefirst power converter control area, and the semiconductor chipcomprises: a working status signal receiving pin for receiving theworking status signal and transmitting the working status signal to thefirst power converter control area inside the semiconductor chip.
 5. Thesemiconductor chip power supply system according to claim 4, wherein thedrive signal sending pin and the working status signal receiving pin aremultiplexed.
 6. The semiconductor chip power supply system according toclaim 1, wherein the semiconductor chip comprises: a first power supplypin and a second power supply pin, the first power supply pin iselectrically connected to the first data processing function area andreceives a first voltage provided by the first power converter powerstage to supply power to the first data processing function area, andthe second power supply pin is electrically connected to the first powerconverter control area and receives a second voltage to supply power tothe first power converter control area.
 7. The semiconductor chip powersupply system according to claim 6, wherein the first power supply pinis further electrically connected to the first power converter controlarea, and when the first voltage is greater than a threshold value, thefirst voltage of the first power supply pin is used to supply power tothe first power converter control area instead of the second voltage ofthe second power supply pin.
 8. The semiconductor chip power supplysystem according to claim 1, wherein the semiconductor chip furthercomprises: a first power management data register and a firstsemiconductor chip power management area, the first power managementdata register is electrically connected to the first semiconductor chippower management area, the first power management data register iselectrically connected to the first power converter control area, thefirst semiconductor chip power management area provides a controlparameter required by the first power converter control area and storesthe control parameter into the first power management data register, andthe first power converter control area adjusts a power output of thefirst power converter power stage by reading the control parameter inthe first power management data register.
 9. The semiconductor chippower supply system according to claim 1, wherein the number of thefirst data processing function areas is N, and each of the first dataprocessing function areas is electrically connected to the first powersupply pin, N being greater than or equal to
 2. 10. The semiconductorchip power supply system according to claim 6, wherein the semiconductorchip further comprises: a second data processing function area and asecond power converter control area, the second data processing functionarea and the second power converter control area are formed on the firstsemiconductor substrate of the semiconductor chip; and the semiconductorchip power supply system further comprises: a second power converterpower stage located outside the first semiconductor substrate andelectrically connected to the second power converter control area andthe second data processing function area; wherein the second powerconverter control area controls the second power converter power stageto supply power to the second data processing function area.
 11. Thesemiconductor chip power supply system according to claim 10, whereinthe semiconductor chip comprises: a third power supply pin and a fourthpower supply pin, the third power supply pin is electrically connectedto the second data processing function area and receives a third voltageprovided by the second power converter power stage to supply power tothe second data processing function area, and the fourth power supplypin is electrically connected to the second power converter control areaand receives a fourth voltage to supply power to the second powerconverter control area.
 12. The semiconductor chip power supply systemaccording to claim 11, wherein the first voltage is different from thethird voltage, or the second voltage is different from the fourthvoltage, or the first voltage is different from the third voltage andthe second voltage is different from the fourth voltage.
 13. Thesemiconductor chip power supply system according to claim 10, whereinthe semiconductor chip comprises: a third power supply pin, the thirdpower supply pin is electrically connected to the second data processingfunction area and receives a third voltage provided by the second powerconverter power stage to supply power to the second data processingfunction area, and the second power supply pin is further electricallyconnected to the second power converter control area to supply power tothe second power converter control area.
 14. The semiconductor chippower supply system according to claim 10, wherein the semiconductorchip further comprises: a second power management data register and asecond semiconductor chip power management area, the second powermanagement data register is electrically connected to the secondsemiconductor chip power management area, the second power managementdata register is electrically connected to the second power convertercontrol area, the second semiconductor chip power management areaprovides a control parameter required by the second power convertercontrol area and stores the control parameter into the second powermanagement data register, and the second power converter control areaadjusts a power output of the second power converter power stage byreading the control parameter in the second power management dataregister.
 15. The semiconductor chip power supply system according toclaim 10, wherein the semiconductor chip further comprises: a firstpower management data register and a first semiconductor chip powermanagement area, the first power management data register iselectrically connected to the first semiconductor chip power managementarea, the first power management data register is electrically connectedto the first power converter control area and the second power convertercontrol area, the first semiconductor chip power management areaprovides control parameters required by the first power convertercontrol area and the second power converter control area and stores thecontrol parameters into the first power management data register, andthe first power converter control area and the second power convertercontrol area respectively adjust power outputs of the first powerconverter power stage and the second power converter power stage byreading the control parameters in the first power management dataregister.
 16. The semiconductor chip power supply system according toclaim 1, wherein the semiconductor chip further comprises: a second dataprocessing function area formed on the first semiconductor substrate ofthe semiconductor chip; the semiconductor chip power supply systemfurther comprises: a second power converter power stage located outsidethe first semiconductor substrate and a power supply control chip formedon a second semiconductor substrate, the second power converter powerstage being electrically connected to the power supply control chip andthe second data processing function area; wherein the power supplycontrol chip controls the second power converter power stage to supplypower to the second data processing function area.
 17. The semiconductorchip power supply system according to claim 16, wherein a processprecision of the semiconductor chip is higher than or equal to 28 nm,and a process precision of the power supply control chip is lower than28 nm.
 18. The semiconductor chip power supply system according to claim1, wherein the first power converter power stage is mounted in a slot ofthe semiconductor chip.
 19. The semiconductor chip power supply systemaccording to claim 1, wherein the semiconductor chip is carried on asemiconductor chip carrier board, the semiconductor chip carrier boardis plugged on a motherboard, and the first power converter power stageis disposed to contact to the semiconductor chip carrier board.
 20. Thesemiconductor chip power supply system according to claim 19, whereinthe first power converter power stage is mounted between thesemiconductor chip carrier board and the motherboard.
 21. Thesemiconductor chip power supply system according to claim 19, whereinthe first power converter power stage penetrates through the motherboardand is mounted below the semiconductor chip carrier board.
 22. Thesemiconductor chip power supply system according to claim 1, furthercomprising: a high frequency capacitor integrated in the first powerconverter power stage, the high frequency capacitor having a resonantfrequency greater than or equal to 2 MHz.
 23. The semiconductor chippower supply system according to claim 8, wherein the firstsemiconductor chip power management area, after receiving informationthat the first data processing function area is to change consumedcurrent, provides the control parameter to the first power convertercontrol area, so that the first power converter control area controlsthe output voltage of the first power converter power stage to beadjusted before the current consumed by the first data processingfunction area changes, and an adjustment direction of the output voltageof the first power converter power stage is opposite to a changedirection of the output voltage of the first power converter power stagedue to the change of the current consumed by the first data processingfunction area.
 24. The semiconductor chip power supply system accordingto claim 1, wherein a highest operation frequency of the semiconductorchip is greater than or equal to 500 MHz.
 25. The semiconductor chippower supply system according to claim 1, further comprising: a directcurrent-direct current converter electrically connected to an input endof the first power converter power stage.
 26. The semiconductor chippower supply system according to claim 1, wherein a process precision ofthe semiconductor chip is higher than or equal to 28 nm.
 27. Thesemiconductor chip power supply system according to claim 26, whereinthe semiconductor chip power supply system has a startup sequence asbelow: the first power converter control area is supplied with arequired voltage Vcon, after initiation of the first power convertercontrol area, an input voltage to the first power converter power stageVin is being detected, and when it is detected that the input voltage tothe first power converter power stage enters into a pre-defined range,the first power converter control area controls the first powerconverter power stage to supply power Vo to other parts of thesemiconductor chip besides the first power converter control area.